Infineon Dual HEXFET 2 Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC

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N° de stock RS:
168-5982
Référence fabricant:
IRF9362TRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

32mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

13nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Length

5mm

Standards/Approvals

No

Width

4 mm

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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