Infineon CoolMOS P6 Type N-Channel MOSFET, 23.8 A, 650 V Enhancement, 3-Pin TO-263
- N° de stock RS:
- 168-5906
- Référence fabricant:
- IPB60R160P6ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 1000 unités)*
1 384,00 €
(TVA exclue)
1 675,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 21 avril 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 1,384 € | 1 384,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 168-5906
- Référence fabricant:
- IPB60R160P6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23.8A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | CoolMOS P6 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 176W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.31mm | |
| Standards/Approvals | No | |
| Width | 4.57 mm | |
| Height | 9.45mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23.8A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series CoolMOS P6 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 176W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.31mm | ||
Standards/Approvals No | ||
Width 4.57 mm | ||
Height 9.45mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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