onsemi PowerTrench Type P-Channel PowerTrench MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252
- N° de stock RS:
- 124-1417
- Référence fabricant:
- FDD4141
- Fabricant:
- onsemi
Sous-total (1 bobine de 2500 unités)*
872,50 €
(TVA exclue)
1 055,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 24 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,349 € | 872,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-1417
- Référence fabricant:
- FDD4141
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | PowerTrench MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | PowerTrench | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type PowerTrench MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series PowerTrench | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Height 2.39mm | ||
Length 6.73mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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