Infineon HEXFET N-Channel MOSFET, 240 A, 55 V, 7-Pin D2PAK IRF3805S-7PPBF

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
166-1010
Référence fabricant:
IRF3805S-7PPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

240 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

130 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Height

4.55mm

Minimum Operating Temperature

-55 °C

Pays d'origine :
MX

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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