Infineon HEXFET N-Channel MOSFET, 63 A, 100 V Enhancement TO-252 IRLR3110ZTRPBF
- N° de stock RS:
- 257-9453
- Référence fabricant:
- IRLR3110ZTRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
9,67 €
(TVA exclue)
11,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 3 265 unité(s) expédiée(s) à partir du 02 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,934 € | 9,67 € |
| 50 - 120 | 1,624 € | 8,12 € |
| 125 - 245 | 1,508 € | 7,54 € |
| 250 - 495 | 1,412 € | 7,06 € |
| 500 + | 0,872 € | 4,36 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 257-9453
- Référence fabricant:
- IRLR3110ZTRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 100V Maximum Drain‑Source Voltage, 63A Maximum Continuous Drain Current - IRLR3110ZTRPBF
This MOSFET is a through‑hole power transistor designed for switching and power‑management roles in circuits requiring high current handling and elevated temperature endurance. It operates as an N‑channel enhancement device rated for medium‑voltage applications and is intended for installations where a TO‑252 package and straightforward PCB mounting are preferred.
Features and Benefits:
• 16mΩ Rds(on) reduces conduction losses during high current flow
• 100V Vds supports medium‑voltage switching applications
• 63A continuous drain current enables sustained heavy‑load operation
• -55°C to +175°C temperature range permits high‑temperature deployment
• 1.3V forward gate voltage allows efficient gate‑drive performance
• 100V Vds supports medium‑voltage switching applications
• 63A continuous drain current enables sustained heavy‑load operation
• -55°C to +175°C temperature range permits high‑temperature deployment
• 1.3V forward gate voltage allows efficient gate‑drive performance
Applications
• Suitable for DC power conversion stages in industrial equipment
• Ideal for motor‑drive switching in Compact assemblies
• Used with power supplies requiring high current throughput
• Can be used for battery management in high‑load systems
• Appropriate for thermal‑stress testing fixtures and rigs
• Ideal for motor‑drive switching in Compact assemblies
• Used with power supplies requiring high current throughput
• Can be used for battery management in high‑load systems
• Appropriate for thermal‑stress testing fixtures and rigs
What package type does it use for board mounting?
It is supplied in a TO‑252 package configured for through‑hole mounting, facilitating mechanical stability and heat dissipation.
What channel behaviour should designers expect?
It functions as an enhancement‑mode N‑channel transistor, requiring a positive gate‑to‑source drive for conduction.
How does temperature capability affect deployment?
The device is specified to operate across a -55°C to +175°C span, allowing use in environments with substantial thermal variation.
Is this component suitable for automotive‑standard projects?
The part is not designated to automotive standards and should not be assumed to meet those specific qualification criteria.
Liens connexes
- Infineon HEXFET N-Channel MOSFET 100 V TO-252
- Infineon HEXFET N-Channel MOSFET 100 V TO-252 IRLR3110ZTRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IRFR4510TRPBF
- Infineon HEXFET N-Channel MOSFET 100 V TO-252
- Infineon HEXFET N-Channel MOSFET 100 V TO-252
- Infineon HEXFET N-Channel MOSFET 20 V TO-252
- Infineon HEXFET N-Channel MOSFET 40 V TO-252
