Infineon HEXFET Type P-Channel MOSFET, -13 A, -150 V TO-252

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Sous-total (1 bobine de 3000 unités)*

1 440,00 €

(TVA exclue)

1 740,00 €

(TVA incluse)

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  • Expédition à partir du 18 mars 2026
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Unité
Prix par unité
la bobine*
3000 +0,48 €1 440,00 €

*Prix donné à titre indicatif

N° de stock RS:
258-3985
Référence fabricant:
IRFR6215TRLPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-13A

Maximum Drain Source Voltage Vds

-150V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

580mΩ

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.6V

Maximum Power Dissipation Pd

110W

Typical Gate Charge Qg @ Vgs

44nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapour phase, infrared, or wave soldering techniques. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

increased ruggedness

Wide availability from distribution partners

Industry standard qualification level


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