Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-263

N° de stock RS:: 165-5896
Référence fabricant:: IRF540NSTRRPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-263

Offre groupée disponible

Sous-total (1 bobine de 800 unités)*

919,20 €

(TVA exclue)

1 112,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Temporairement en rupture de stock

Expédition à partir du 05 octobre 2026

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Unité	Prix par unité	la bobine*
800 - 800	1,149 €	919,20 €
1600 - 1600	1,092 €	873,60 €
2400 +	1,023 €	818,40 €

*Prix donné à titre indicatif

N° de stock RS:: 165-5896
Référence fabricant:: IRF540NSTRRPBF
Fabricant:: Infineon

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Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	44mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	71nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	130W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	4.83mm
	Length	10.67mm
	Width	9.65 mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 44mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 71nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 130W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 4.83mm
	Length 10.67mm
	Width 9.65 mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRF540NSTRRPBF

This N-channel power MOSFET is specifically designed for high-efficiency applications, delivering significant performance in various electronic systems. It excels in high-current environments, where reliability and low resistance are essential. Its enhancements make it particularly useful in industries focused on automation and power management.

Features & Benefits

• Low RDS(on) minimises power losses during operation

• Continuous drain current capability of 33A supports various applications

• Wide gate-source voltage range provides design flexibility

• Withstands high temperatures up to 175°C

• Fast switching improves overall circuit efficiency

• D2PAK surface mount design facilitates PCB integration

Applications

• Used in power management circuits for automation

• Commonly implemented in DC-DC converters for energy efficiency

• Suitable for motor drive that require high current

• Found in power supply modules for industrial electronics

• Appropriate for automotive due to robust thermal performance

What is the significance of low RDS(on) in operation?

Low RDS(on) reduces heat generation and enhances energy efficiency, which is Crucial for extending component life and lowering operating expenses.

How does the MOSFET perform at higher temperatures?

It operates reliably up to 175°C, ensuring stability in extreme conditions while meeting performance demands without failure.

Can this device handle pulsed currents, and what are the specifications?

It supports pulsed drain currents up to 110A, effectively managing short bursts of high power, making it Ideal for applications with fluctuating load conditions.

What are the implications of the specified gate threshold voltage?

The gate threshold voltage range of 2V to 4V indicates the voltage needed to start conduction, providing essential information for design integration in control circuits.

How does the D2PAK package affect its usability?

The D2PAK package design promotes efficient heat dissipation and simplifies surface mount assembly, making it suitable for high-power applications on Compact PCBs.