Infineon OptiMOS -T2 Type N-Channel Power Transistor, 80 A, 60 V Enhancement, 3-Pin TO-263

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N° de stock RS:
165-5607
Référence fabricant:
IPB80N06S4L05ATMA2
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

OptiMOS -T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.8mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

83nC

Maximum Gate Source Voltage Vgs

±16 V

Maximum Power Dissipation Pd

107W

Maximum Operating Temperature

175°C

Length

10mm

Standards/Approvals

RoHS

Height

4.4mm

Width

9.25 mm

Automotive Standard

AEC-Q101

Statut RoHS non applicable

Pays d'origine :
CN

Infineon OptiMOS™ T2 Power MOSFETs


Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode

AEC qualified

MSL1 up to 260°C Peak reflow

175°C operating temperature

Green Product (RoHS compliant)

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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