Infineon OptiMOS -T2 Type N-Channel Power Transistor, 80 A, 60 V Enhancement, 3-Pin TO-263 IPB80N06S4L05ATMA2
- N° de stock RS:
- 826-8998
- Référence fabricant:
- IPB80N06S4L05ATMA2
- Fabricant:
- Infineon
Sous-total (1 paquet de 20 unités)*
12,76 €
(TVA exclue)
15,44 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 620 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 + | 0,638 € | 12,76 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 826-8998
- Référence fabricant:
- IPB80N06S4L05ATMA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | OptiMOS -T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Typical Gate Charge Qg @ Vgs | 83nC | |
| Maximum Power Dissipation Pd | 107W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 10mm | |
| Height | 4.4mm | |
| Width | 9.25 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series OptiMOS -T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Typical Gate Charge Qg @ Vgs 83nC | ||
Maximum Power Dissipation Pd 107W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 10mm | ||
Height 4.4mm | ||
Width 9.25 mm | ||
Automotive Standard AEC-Q101 | ||
Statut RoHS non applicable
Infineon OptiMOS™ T2 Power MOSFETs
Infineons new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C Peak reflow
175°C operating temperature
Green Product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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