IXYS HiperFET Type N-Channel Power MOSFET, 80 A, 250 V Enhancement, 3-Pin TO-247

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Sous-total (1 unité)*

13,08 €

(TVA exclue)

15,83 €

(TVA incluse)

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*Prix donné à titre indicatif

N° de stock RS:
146-4406
Numéro d'article Distrelec:
302-53-334
Référence fabricant:
IXFH80N25X3
Fabricant:
IXYS
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Marque

IXYS

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-247

Series

HiperFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

390W

Forward Voltage Vf

1.4V

Typical Gate Charge Qg @ Vgs

83nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

21.45mm

Length

16.24mm

Width

5.3 mm

Distrelec Product Id

30253334

Automotive Standard

No

Lowest on-resistance RDS(ON) and gate charge Qg

Fast soft recovery body diode dv/dt ruggedness

Superior avalanche capability

International standard packages

Battery chargers for light electric vehicles

Synchronous rectification in switching power supplies

Motor control

DC-DC converters

Uninterruptible power supplies

Electric forklifts

Class-D audio amplifiers

Telecom systems

High efficiency

High power density

Improved system reliability

Easy to design in

200 MHz/330 DMIPS, MIPS32 microAptiv core

Dual Panel Flash for live update support

12-bit, 18 MSPS, 45-channel ADC module

Memory Management Unit for optimum embedded OS execution

microMIPS mode for up to 35% code compression

CAN, UART, I2C, PMP, EBI, SQI & Analog Comparators

SPI/I2S interfaces for audio processing and playback

Hi-Speed USB Device/Host/OTG

10/100 Mbps Ethernet MAC with MII and RMII Interface

Advanced Memory Protection

2MB Flash memory (plus an additional 160 KB of Boot Flash)

640KB SRAM memory

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