IXYS HiperFET Type N-Channel MOSFET, 80 A, 250 V Enhancement, 3-Pin TO-263
- N° de stock RS:
- 146-4403
- Numéro d'article Distrelec:
- 302-53-297
- Référence fabricant:
- IXFA80N25X3
- Fabricant:
- IXYS
Offre groupée disponible
Sous-total (1 unité)*
10,19 €
(TVA exclue)
12,33 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 200 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 10,19 € |
| 5 - 9 | 8,73 € |
| 10 - 24 | 8,30 € |
| 25 + | 7,96 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 146-4403
- Numéro d'article Distrelec:
- 302-53-297
- Référence fabricant:
- IXFA80N25X3
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | HiperFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 390W | |
| Typical Gate Charge Qg @ Vgs | 83nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Width | 11.05 mm | |
| Length | 10.41mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series HiperFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 390W | ||
Typical Gate Charge Qg @ Vgs 83nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Width 11.05 mm | ||
Length 10.41mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Lowest on-resistance RDS(ON) and gate charge Qg
Fast soft recovery body diode dv/dt ruggedness
Superior avalanche capability
International standard packages
Battery chargers for light electric vehicles
Synchronous rectification in switching power supplies
Motor control
DC-DC converters
Uninterruptible power supplies
Electric forklifts
Class-D audio amplifiers
Telecom systems
High efficiency
High power density
Improved system reliability
Easy to design in
200 MHz/330 DMIPS, MIPS32 microAptiv core
Dual Panel Flash for live update support
12-bit, 18 MSPS, 45-channel ADC module
Memory Management Unit for optimum embedded OS execution
microMIPS mode for up to 35% code compression
CAN, UART, I2C, PMP, EBI, SQI & Analog Comparators
SPI/I2S interfaces for audio processing and playback
Hi-Speed USB Device/Host/OTG
10/100 Mbps Ethernet MAC with MII and RMII Interface
Advanced Memory Protection
2MB Flash memory (plus an additional 160 KB of Boot Flash)
640KB SRAM memory
Liens connexes
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