Infineon HEXFET Type N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 145-9198
- Référence fabricant:
- IRFB4410ZPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
32,50 €
(TVA exclue)
39,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 450 unité(s) expédiée(s) à partir du 10 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,65 € | 32,50 € |
| 100 - 200 | 0,531 € | 26,55 € |
| 250 - 450 | 0,525 € | 26,25 € |
| 500 - 950 | 0,518 € | 25,90 € |
| 1000 + | 0,512 € | 25,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 145-9198
- Référence fabricant:
- IRFB4410ZPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 97A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 83nC | |
| Maximum Power Dissipation Pd | 230W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.66mm | |
| Height | 9.02mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 97A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 83nC | ||
Maximum Power Dissipation Pd 230W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.66mm | ||
Height 9.02mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 100V Maximum Drain Source Voltage, 97A Maximum Continuous Drain Current - IRFB4410ZPBF
This MOSFET is a high-power switching transistor designed for through-hole mounting in power electronics assemblies. It operates as an N-channel enhancement device capable of handling substantial continuous drain current and high drain-source voltage across a wide ambient range, making it suitable for demanding thermal environments and conventional heatsinking arrangements.
Features and Benefits:
• 100V drain-source voltage enables high-voltage switching
• 97A continuous current supports heavy-load applications
• 9 mΩ Rds(on) minimises conduction losses during operation
• 230W power dissipation allows sustained high-power use
• 83 nC typical gate charge gives predictable switching energy
• 20V gate tolerance permits robust gate-drive margins
• 97A continuous current supports heavy-load applications
• 9 mΩ Rds(on) minimises conduction losses during operation
• 230W power dissipation allows sustained high-power use
• 83 nC typical gate charge gives predictable switching energy
• 20V gate tolerance permits robust gate-drive margins
Applications
• Suitable for industrial motor-drive inverter stages
• Ideal for high-current DC-DC converters and supplies
• Used for power switching in telecoms and server supplies
• Can be used for battery management and charging systems
• Suitable for laboratory power electronics prototyping
• Ideal for high-current DC-DC converters and supplies
• Used for power switching in telecoms and server supplies
• Can be used for battery management and charging systems
• Suitable for laboratory power electronics prototyping
What package type is provided for mounting and cooling?
It is supplied in a TO-220 through-hole package that facilitates secure PCB mounting and straightforward attachment to a heatsink for thermal management.
What gate-drive considerations should I make for switching performance?
Expect a typical total gate charge of 83 nC at standard gate voltage
design gate drivers to source and sink sufficient current to meet target switching speeds while managing switching losses.
How does junction temperature range affect deployment?
The device is rated to operate from -55 °C up to 175 °C, enabling use in applications with broad ambient and junction temperature excursions provided adequate thermal design is applied.
What is the forward voltage in conduction and its implication?
The forward conduction voltage is 1.3V under specified conditions, which contributes to overall conduction loss calculations when sizing thermal and power budgets.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRFB4410ZPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF100B202
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRFS4410ZTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220