Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SuperSO8 5 x 6 BSC009NE2LS5IATMA1
- N° de stock RS:
- 133-9881
- Référence fabricant:
- BSC009NE2LS5IATMA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 5 unités)*
8,69 €
(TVA exclue)
10,515 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 27 mai 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 1,738 € | 8,69 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 133-9881
- Référence fabricant:
- BSC009NE2LS5IATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | OptiMOS 5 | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.95mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 74W | |
| Forward Voltage Vf | 0.62V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | RoHS, JESD22, JEDEC J-STD20, IEC61249-2-21 | |
| Length | 5.49mm | |
| Width | 6.35 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series OptiMOS 5 | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.95mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 74W | ||
Forward Voltage Vf 0.62V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals RoHS, JESD22, JEDEC J-STD20, IEC61249-2-21 | ||
Length 5.49mm | ||
Width 6.35 mm | ||
Automotive Standard No | ||
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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