Infineon OptiMOS-T2 Type N-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50N04S408ATMA1

N° de stock RS:: 110-7766
Référence fabricant:: IPD50N04S408ATMA1
Fabricant:: Infineon

Infineon OptiMOS-T2 Type N-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50N04S408ATMA1

Sous-total (1 ruban de 25 unités)*

20,375 €

(TVA exclue)

24,65 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

Plus 4 250 unité(s) expédiée(s) à partir du 10 août 2026

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Unité	Prix par unité	le ruban*
25 +	0,815 €	20,38 €

*Prix donné à titre indicatif

N° de stock RS:: 110-7766
Référence fabricant:: IPD50N04S408ATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS-T2
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.9mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	46W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	17.2nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	2.3mm
	Length	6.5mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS-T2
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.9mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 46W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 17.2nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 2.3mm
	Length 6.5mm
	Automotive Standard AEC-Q101

Statut RoHS non applicable

Infineon OptiMOS-T2 Series MOSFET, 40V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50N04S408ATMA1

This MOSFET is a 40V N‑channel power transistor designed for high‑current switching in surface‑mounted applications. It operates across a wide temperature span and is built to meet automotive stress demands, making it suitable for robust electronic power stages where efficient conduction and thermal endurance are required.

Features and Benefits:

• 7.9mΩ Rds(on) reduces conduction losses for higher efficiency
• 50A continuous drain current enables heavy current switching
• 17.2nC typical gate charge speeds up switching transitions
• 46W maximum power dissipation manages thermal load in operation
• 20V maximum gate tolerance protects against gate overvoltage
• Enhancement‑mode N‑channel provides straightforward gate‑driven control

Applications

• Suitable for 12V automotive power distribution stages
• Ideal for synchronous buck converter output stages
• Used with motor‑drive half‑bridge circuits
• Can be used for high‑current DC‑DC conversion modules
• Suitable for power management in industrial control units

What ambient range can it withstand during operation?

It functions from -55°C up to 175°C, accommodating extreme cold starts and high‑temperature environments.

How does the package affect assembly and thermal path?

The TO‑252 surface‑mount package offers a compact footprint and a direct thermal path to the PCB for heat dissipation.

What gate drive considerations are necessary for reliable switching?

Drive voltages should remain within ±20V of the gate‑source rating and be sufficient to fully enhance the channel for low Rds(on).

How does the device behave under continuous heavy load?

It supports up to 50A continuous drain current while dissipating up to 46W, requiring appropriate PCB thermal design to maintain junction temperatures.