Infineon OptiMOS-T2 N-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252 IPD90N04S403ATMA1

N° de stock RS:: 214-9054
Référence fabricant:: IPD90N04S403ATMA1
Fabricant:: Infineon

Infineon OptiMOS-T2 N-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252 IPD90N04S403ATMA1

Sous-total (1 bobine de 2500 unités)*

1 200,00 €

(TVA exclue)

1 450,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Unité	Prix par unité	la bobine*
2500 +	0,48 €	1 200,00 €

*Prix donné à titre indicatif

N° de stock RS:: 214-9054
Référence fabricant:: IPD90N04S403ATMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-252
	Series	OptiMOS-T2
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.2mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	94W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	51nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	2.3mm
	Length	6.5mm
	Standards/Approvals	No
	Width	6.22mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-252
	Series OptiMOS-T2
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.2mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 94W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 51nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 2.3mm
	Length 6.5mm
	Standards/Approvals No
	Width 6.22mm
	Automotive Standard AEC-Q101

Datasheet - IPD90N04S403ATMA1

Infineon OptiMOS-T2 Series MOSFET, 40V Maximum Drain Source Voltage, 90A Maximum Continuous Drain Current - IPD90N04S403ATMA1

This MOSFET is a surface-mount N-channel enhancement device designed for power switching and conversion in demanding environments. It operates across a wide temperature range and supports high continuous drain currents, making it suitable for thermal and electrical stress conditions in automotive and industrial contexts.

Features and Benefits:

• 40V maximum drain-source voltage enables robust low-voltage power stages
• 90A continuous drain current supports high-current delivery
• 3.2mΩ maximum Rds(on) minimises conduction losses under load
• 94W maximum power dissipation allows substantial heat handling
• 51nC typical gate charge permits predictable switching behaviour
• 20V maximum gate-source voltage preserves gate insulation margin

Applications

• Suitable for DC-DC converter power stages in vehicles
• Ideal for high-current load switching in automotive systems
• Used with surface-mount assemblies requiring Compact power devices
• Can be used for synchronous rectification in converters
• Used for thermal-tolerant power stages exposed to wide temperatures

What ambient range can it tolerate during operation?

It is rated to function from −55°C up to 175°C, providing wide thermal tolerance.

Which package type is used for board mounting?

It is supplied in a TO-252 package for surface-mount applications.

How many electrical connections does the device provide?

It has three pins for standard drain, gate and source connections.

What is the channel polarity and mode of operation?

The device uses an N-type channel and operates in enhancement mode.

What forward voltage can be expected during conduction?

The forward voltage is specified at 1.3V for conduction characterisation.