Vishay TrenchFET N-Channel Power MOSFET, 375 A, 60 V Enhancement Mode, 8-Pin PowerPAK SIHG033N60SF-GE3
- N° de stock RS:
- 851-495
- Référence fabricant:
- SIHG033N60SF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
7,39 €
(TVA exclue)
8,94 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 22 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 7,39 € |
| 10 - 99 | 4,96 € |
| 100 - 499 | 4,06 € |
| 500 - 999 | 3,44 € |
| 1000 + | 3,01 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 851-495
- Référence fabricant:
- SIHG033N60SF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 375A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement Mode | |
| Typical Gate Charge Qg @ Vgs | 101nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5mm | |
| Length | 6mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 375A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement Mode | ||
Typical Gate Charge Qg @ Vgs 101nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Width 5mm | ||
Length 6mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The Vishay power MOSFET designed for high-performance switching applications, delivering exceptional efficiency and reliability. This component features fast body diode technology, making it suitable for demanding voltage and current conditions.
Latest generation SF series technology enhances performance longevity
Low figure of merit ensures efficient operation
Avalanche energy rated, ensuring robustness under extreme conditions
Material categorization aids compliance in varied applications
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