Vishay TrenchFET N-Channel MOSFET, 9 A, 60 V Enhancement, 6-Pin PowerPAK SIA4620DJ-T1-GE3
- N° de stock RS:
- 904-973
- Référence fabricant:
- SIA4620DJ-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
0,37 €
(TVA exclue)
0,45 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 24 | 0,37 € |
| 25 - 99 | 0,24 € |
| 100 + | 0,14 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 904-973
- Référence fabricant:
- SIA4620DJ-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.023Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 17.9W | |
| Typical Gate Charge Qg @ Vgs | 4.4nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.05mm | |
| Standards/Approvals | ROHS | |
| Width | 2.05mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.023Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 17.9W | ||
Typical Gate Charge Qg @ Vgs 4.4nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 2.05mm | ||
Standards/Approvals ROHS | ||
Width 2.05mm | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay N-Channel MOSFET designed for efficient power management. It excels in various applications due to its high performance metrics and Compact packaging, making it Ideal for modern electronic designs.
Operates at a maximum drain-source voltage of 60 V
Features low on-state resistance for enhanced efficiency
Offers a continuous drain current up to 8.6 A at 25 °C
Includes extensive testing for reliability and performance
Liens connexes
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