Vishay SI N-Channel Single MOSFETs, 3.4 A, 30 V Enhancement Mode, 6-Pin P SIA432BDJ-T1-GE3
- N° de stock RS:
- 829-363
- Référence fabricant:
- SIA432BDJ-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
0,78 €
(TVA exclue)
0,94 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 0,78 € |
| 10 - 99 | 0,54 € |
| 100 - 499 | 0,34 € |
| 500 - 999 | 0,22 € |
| 1000 + | 0,16 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 829-363
- Référence fabricant:
- SIA432BDJ-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SI | |
| Package Type | P | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.0192Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 15.6W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 2.05mm | |
| Height | 0.75mm | |
| Length | 2.05mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SI | ||
Package Type P | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.0192Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 15.6W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Width 2.05mm | ||
Height 0.75mm | ||
Length 2.05mm | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Vishay high-performance N-Channel MOSFET designed for efficient power management in various applications. Its robust construction enables reliable function under demanding conditions.
30 V drain-source voltage facilitates versatile application range
Max on-state resistance of 0.0192 Ohm at 10 V enhances power efficiency
Configured as a single device, optimising space and performance
Designed with TrenchFET technology for superior switching capabilities
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