Vishay TrenchFET Gen IV N channel-Channel MOSFET, 361 A, 80 V N, 8-Pin PowerPAK 10 x 12 SIJK4810-T1-GE3
- N° de stock RS:
- 790-429
- Référence fabricant:
- SIJK4810-T1-GE3
- Fabricant:
- Vishay
Visuel non contractuel
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 50 unités)*
210,60 €
(TVA exclue)
254,85 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 02 juillet 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 50 - 450 | 4,212 € | 210,60 € |
| 500 - 2450 | 2,617 € | 130,85 € |
| 2500 - 4950 | 2,02 € | 101,00 € |
| 5000 + | 1,368 € | 68,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 790-429
- Référence fabricant:
- SIJK4810-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 361A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | TrenchFET Gen IV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0018Ω | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 446W | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 12mm | |
| Width | 10mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 361A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK 10 x 12 | ||
Series TrenchFET Gen IV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0018Ω | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 446W | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 12mm | ||
Width 10mm | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay N Channel MOSFET is designed for efficient power management in various applications, featuring an Advanced TrenchFET Gen IV technology that reduces conduction losses and improves overall performance.
Operates with a drain-source voltage of up to 80 V
Provides a low on-state resistance of 0.0018 Ω at 10 V gate-source voltage
Rated for continuous drain current of 361 A
Features Kelvin source connection to minimise gate noise
Liens connexes
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