ROHM N-Channel MOSFET, 240 A, 60 V, 3-Pin TO-263AB-3LSHYAD RJ1L10BBGTL1
- N° de stock RS:
- 780-362
- Référence fabricant:
- RJ1L10BBGTL1
- Fabricant:
- ROHM
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 780-362
- Référence fabricant:
- RJ1L10BBGTL1
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 240A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263AB-3LSHYAD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.41mΩ | |
| Maximum Power Dissipation Pd | 192W | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.36mm | |
| Height | 4.77mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 8.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 240A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263AB-3LSHYAD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.41mΩ | ||
Maximum Power Dissipation Pd 192W | ||
Maximum Gate Source Voltage Vgs 10V | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.36mm | ||
Height 4.77mm | ||
Standards/Approvals RoHS Compliant | ||
Width 8.9mm | ||
Automotive Standard No | ||
The ROHM Power MOSFET delivers high-performance N-channel switching for high-current power management. This robust device is engineered for motor drives and DC/DC converters, ensuring exceptional efficiency in demanding industrial switching circuits.
Drain to source voltage of 60 V
Continuous drain current of 105 A
Ultra-low 1.85 mΩ typical on-resistance
High power dissipation of 192 W
Liens connexes
- ROHM N-Channel MOSFET 40 V, 3-Pin TO-263AB-3LSHYAD RJ1G10BBGTL1
- ROHM RJ1N04BBHT N-Channel Single MOSFETs 80 V Enhancement, 3-Pin TO-263AB-3LSHYAD RJ1N04BBHTL1
- ROHM RJ1 N-Channel Single MOSFETs 150 V Enhancement, 3-Pin TO-263AB RJ1R04BBHTL1
- ROHM RJ1 1 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263AB RJ1P10BBHTL1
- ROHM RJ1 1 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263AB RJ1P04BBHTL1
- ROHM RJ1 1 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263AB RJ1P07CBHTL1
- ROHM RJ1 1 N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263AB RJ1R10BBHTL1
- ROHM RX3L18BBG N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 RX3L18BBGC16