Infineon Half Bridge EasyPACK N channel-Channel MOSFET Modules, 100 A, 1200 V Enhancement, 22-Pin PG-TSDSO
- N° de stock RS:
- 762-954
- Référence fabricant:
- F48MXTR12C2M2QH11BPSA1
- Fabricant:
- Infineon
Visuel non contractuel
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
297,73 €
(TVA exclue)
360,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 18 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 4 | 297,73 € |
| 5 + | 288,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 762-954
- Référence fabricant:
- F48MXTR12C2M2QH11BPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N channel | |
| Product Type | MOSFET Modules | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | EasyPACK | |
| Package Type | PG-TSDSO | |
| Mount Type | Screw | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 0.237μC | |
| Maximum Power Dissipation Pd | 20mW | |
| Forward Voltage Vf | 5.35V | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 57.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N channel | ||
Product Type MOSFET Modules | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series EasyPACK | ||
Package Type PG-TSDSO | ||
Mount Type Screw | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 0.237μC | ||
Maximum Power Dissipation Pd 20mW | ||
Forward Voltage Vf 5.35V | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Length 57.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Infineon EasyPACK module features CoolSiC Trench MOSFETs with a voltage rating of 1200 V and current capabilities of 75 A and 150 A maximum. It includes an integrated NTC temperature sensor and rugged mounting clamps. Additionally, the package demonstrates a comparative tracking index (CTI) greater than 600 and a high current pin.
Low inductive design
Low switching losses
High current density
PressFIT contact technology
Liens connexes
- Infineon Half Bridge EasyPACK N channel-Channel MOSFET Modules 1200 V Enhancement, 22-Pin EasyPACK
- Infineon Half Bridge EasyPACK N channel-Channel MOSFET Modules 1200 V Enhancement, 22-Pin EasyPACK
- Infineon Half Bridge HybridPACK N channel-Channel MOSFET Modules 750 V Enhancement, 30-Pin PG-TSON-12
- Infineon Half Bridge C Series N channel-Channel MOSFET Modules 1200 V Enhancement, 7-Pin AG-62MMHB
- Infineon Half Bridge XHP 2 N channel-Channel MOSFET Modules 1200 V Enhancement, 15-Pin AG-62MMHB
- Infineon Half Bridge XHP 2 N channel-Channel MOSFET Modules 1200 V Enhancement, 8-Pin AG-EASY2B
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement EasyPACK FS33MR12W1M1HB70BPSA1
- Infineon FS13MR12W2M1H_C55 Type N-Channel MOSFET 1200 V Enhancement EasyPACK FS13MR12W2M1HPB11BPSA1