Infineon CoolSiC N channel-Channel Power MOSFET, 68 A, 440 V Enhancement, 8-Pin TO-LL IMT44R025M2HXTMA2
- N° de stock RS:
- 762-917
- Référence fabricant:
- IMT44R025M2HXTMA2
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
8,40 €
(TVA exclue)
10,16 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 25 juin 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 8,40 € |
| 10 - 49 | 6,80 € |
| 50 - 99 | 5,21 € |
| 100 + | 4,18 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 762-917
- Référence fabricant:
- IMT44R025M2HXTMA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 440V | |
| Package Type | TO-LL | |
| Series | CoolSiC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 25.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Forward Voltage Vf | 4.3V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.4mm | |
| Standards/Approvals | RoHS | |
| Height | 11.88mm | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 440V | ||
Package Type TO-LL | ||
Series CoolSiC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 25.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Gate Source Voltage Vgs 25V | ||
Forward Voltage Vf 4.3V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 175°C | ||
Width 2.4mm | ||
Standards/Approvals RoHS | ||
Height 11.88mm | ||
Length 10.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolSiC MOSFET is Ideal for high frequency switching and synchronous rectific and features Benchmark gate threshold voltage. Additionally it features XT interconnection technology for best‑in‑class thermal performance.
100% avalanche tested
Recommended gate driving voltage
Qualified for industrial applications
Used for energy storage, UPS and battery formation
Liens connexes
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