Infineon CoolSiC N channel-Channel Power MOSFET, 46 A, 400 V Enhancement, 3-Pin TO-247 IMW40R036M2HXKSA1
- N° de stock RS:
- 762-905
- Référence fabricant:
- IMW40R036M2HXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
7,75 €
(TVA exclue)
9,38 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 236 unité(s) expédiée(s) à partir du 28 août 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 7,75 € |
| 10 - 99 | 6,19 € |
| 100 - 479 | 5,02 € |
| 480 - 1199 | 4,45 € |
| 1200 + | 3,94 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 762-905
- Référence fabricant:
- IMW40R036M2HXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-247 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 36.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 139W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Forward Voltage Vf | 4.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 20.8mm | |
| Standards/Approvals | RoHS | |
| Height | 4.83mm | |
| Width | 15.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-247 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 36.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 139W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Gate Source Voltage Vgs 25V | ||
Forward Voltage Vf 4.3V | ||
Maximum Operating Temperature 175°C | ||
Length 20.8mm | ||
Standards/Approvals RoHS | ||
Height 4.83mm | ||
Width 15.7mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Infineon CoolSiC MOSFET is Ideal for high frequency switching and synchronous rectific and features Benchmark gate threshold voltage. Additionally it features XT interconnection technology for best‑in‑class thermal performance.
100% avalanche tested
Recommended gate driving voltage
Qualified for industrial applications
Used for energy storage, UPS and battery formation
Liens connexes
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- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-247 IMW40R011M2HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IMW65R040M2HXKSA1