Infineon CoolSiC N channel-Channel Power MOSFET, 46 A, 400 V Enhancement, 4-Pin TO-247-4 IMZA40R036M2HXKSA1
- N° de stock RS:
- 762-906
- Référence fabricant:
- IMZA40R036M2HXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
6,80 €
(TVA exclue)
8,23 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 240 unité(s) expédiée(s) à partir du 13 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,80 € |
| 10 - 49 | 5,51 € |
| 50 - 99 | 4,22 € |
| 100 + | 3,37 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 762-906
- Référence fabricant:
- IMZA40R036M2HXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-247-4 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 36.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.3V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Power Dissipation Pd | 139W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 5.1mm | |
| Length | 21.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-247-4 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 36.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.3V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Power Dissipation Pd 139W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 5.1mm | ||
Length 21.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Infineon CoolSiC MOSFET is Ideal for high frequency switching and synchronous rectific and features Benchmark gate threshold voltage. Additionally it features XT interconnection technology for best‑in‑class thermal performance.
100% avalanche tested
Recommended gate driving voltage
Qualified for industrial applications
Used for energy storage, UPS and battery formation
Liens connexes
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-247 IMW40R036M2HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IMW65R039M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IMW65R040M2HXKSA1
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 4-Pin TO-247-4 IMZA40R011M2HXKSA1
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 4-Pin TO-247-4 IMZA40R045M2HXKSA1
- Infineon CoolSiC N channel-Channel Power MOSFET 25 V Enhancement, 4-Pin TO-247-4 IMZC140R019M2HXKSA1
- Infineon CoolSiC N channel-Channel Power MOSFET 1400 V Enhancement, 4-Pin TO-247-4 IMZC140R024M2HXKSA1