Vishay SiR N channel-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin PowerPAK SO-8 SiR580DP
- N° de stock RS:
- 735-135
- Référence fabricant:
- SiR580DP
- Fabricant:
- Vishay
Visuel non contractuel
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
2,88 €
(TVA exclue)
3,48 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité |
|---|---|
| 1 - 9 | 2,88 € |
| 10 - 24 | 1,86 € |
| 25 - 99 | 1,03 € |
| 100 - 499 | 1,02 € |
| 500 + | 1,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 735-135
- Référence fabricant:
- SiR580DP
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 146A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0027Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 80V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 50.6nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 2mm | |
| Length | 7mm | |
| Width | 6mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 146A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8 | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0027Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 80V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 50.6nC | ||
Maximum Operating Temperature 150°C | ||
Height 2mm | ||
Length 7mm | ||
Width 6mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay N-Channel power MOSFET rated for 80V drain-source voltage, Ideal for high-efficiency switching in AI power server and DC/DC converter applications. It delivers ultra-low on-resistance of 2.7mΩ maximum at 10V gate drive to minimize conduction losses under heavy loads.
146A continuous drain current at TC=25°C
76nC maximum total gate charge
-55°C to +150°C operating junction temperature
Liens connexes
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