Vishay SISS126DN N channel-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8 SISS126DN-T1-UE3
- N° de stock RS:
- 735-130
- Référence fabricant:
- SISS126DN-T1-UE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
1,07 €
(TVA exclue)
1,29 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 24 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 24 | 1,07 € |
| 25 - 99 | 0,71 € |
| 100 - 499 | 0,36 € |
| 500 + | 0,35 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 735-130
- Référence fabricant:
- SISS126DN-T1-UE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 54.7A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SISS126DN | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00825Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19.6nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 54.7A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SISS126DN | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00825Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19.6nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 3.3mm | ||
Length 3.3mm | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay N-Channel MOSFET designed for optimal efficiency in power management applications, delivering high performance while operating within specified limits.
Operates at a drain-source voltage of 80 V for reliable performance
Exhibits very low on-state resistance to minimise power loss
Offers a high continuous drain current rating of up to 54.7 A
Liens connexes
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