Vishay SQ7414CENW Type N-Channel Single MOSFETs, 18 A, 60 V Enhancement, 8-Pin PowerPAK SQ7414CENW-T1_JE3

N° de stock RS:: 653-185
Référence fabricant:: SQ7414CENW-T1_JE3
Fabricant:: Vishay

Vishay SQ7414CENW Type N-Channel Single MOSFETs, 18 A, 60 V Enhancement, 8-Pin PowerPAK SQ7414CENW-T1_JE3

Sous-total (1 bobine de 3000 unités)*

1 278,00 €

(TVA exclue)

1 545,00 €

(TVA incluse)

Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard

Unité	Prix par unité	la bobine*
3000 +	0,426 €	1 278,00 €

*Prix donné à titre indicatif

N° de stock RS:: 653-185
Référence fabricant:: SQ7414CENW-T1_JE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	60V
	Series	SQ7414CENW
	Package Type	PowerPAK
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.028Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	25nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	62W
	Maximum Operating Temperature	175°C
	Width	3.4mm
	Standards/Approvals	RoHS
	Length	3.4mm
	Height	1.12mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 60V
	Series SQ7414CENW
	Package Type PowerPAK
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.028Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 25nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 62W
	Maximum Operating Temperature 175°C
	Width 3.4mm
	Standards/Approvals RoHS
	Length 3.4mm
	Height 1.12mm
	Automotive Standard AEC-Q101

Datasheet - SQ7414CENW-T1_JE3

Vishay SQ7414CENW Series Single MOSFETs, 60V Drain Source Voltage, 18A Continuous Drain Current - SQ7414CENW-T1_JE3

This single MOSFET provides switch and amplification capability for power electronic circuits in demanding automotive and industrial contexts. Designed as an N‑channel enhancement device, it is intended for PCB mounting where controlled conduction and thermal resilience are required.

Features and Benefits:

• 60V maximum drain voltage for higher‑voltage systems • 18A continuous drain current to handle substantial load currents • 0.028Ω on‑resistance reducing conduction losses • 25nC typical gate charge for efficient switching control • 62W power dissipation enabling elevated power handling • 175°C maximum operating temperature for high‑temperature environments

Applications

• Suitable for automotive power distribution modules requiring AEC‑Q101 grade components • Ideal for motor drive stages in industrial automation systems • Used for switch‑stage functions in power management units on PCBs • Can be used for battery protection and load switching in vehicle electronics

What gate drive considerations are necessary for efficient switching?

Use a gate driver capable of sourcing and sinking currents to achieve the desired dv/dt given the 25nC typical gate charge at the applied gate voltage.

How should thermal management be approached on a PCB?

Provide thermal vias and adequate copper area on the PCB to dissipate up to 62W and maintain junction temperatures below safe limits at the specified 175°C maximum.

What limits should be observed for safe operating voltages?

Ensure drain-source voltage never exceeds 60V and gate-source voltage remains within ±20V to prevent device stress.

Are there considerations for long‑term ambient extremes?

Design for operation down to -55°C and up to 175°C maximum device temperature, selecting materials and layouts that accommodate thermal cycling and expansion.