Vishay SQ7414CENW Type N-Channel Single MOSFETs, 18 A, 60 V Enhancement, 8-Pin PowerPAK SQ7414CENW-T1_JE3

N° de stock RS:: 653-185
Référence fabricant:: SQ7414CENW-T1_JE3
Fabricant:: Vishay

Vishay SQ7414CENW Type N-Channel Single MOSFETs, 18 A, 60 V Enhancement, 8-Pin PowerPAK SQ7414CENW-T1_JE3

Sous-total (1 bobine de 3000 unités)*

1 278,00 €

(TVA exclue)

1 545,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Dernier stock RS

3 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution

Unité	Prix par unité	la bobine*
3000 +	0,426 €	1 278,00 €

*Prix donné à titre indicatif

N° de stock RS:: 653-185
Référence fabricant:: SQ7414CENW-T1_JE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	60V
	Package Type	PowerPAK
	Series	SQ7414CENW
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.028Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	62W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	25nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Length	3.4mm
	Width	3.4mm
	Height	1.12mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Vishay
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 60V
	Package Type PowerPAK
	Series SQ7414CENW
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.028Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 62W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 25nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Length 3.4mm
	Width 3.4mm
	Height 1.12mm
	Automotive Standard AEC-Q101

Datasheet - SQ7414CENW-T1_JE3

Vishay SQ7414CENW Series Single MOSFETs, 60V Maximum Drain Source Voltage, 18A Maximum Continuous Drain Current - SQ7414CENW-T1_JE3

This single MOSFET device is an N-channel enhancement transistor designed for power switching and regulation in PCB-mounted assemblies. It operates as a high-current switch for power conversion and load control within systems that demand thermally resilient semiconductors and industry-standard manufacturing compliance.

Features and Benefits:

• Low on-resistance 0.028Ω delivering reduced conduction losses
• 18A continuous drain current supporting high load currents
• 62W power dissipation enabling higher power handling
• 60V drain-source rating for medium-voltage designs
• Gate tolerance up to 20V allowing flexible drive levels
• Typical gate charge 25nC facilitating predictable switching behaviour

Applications

• Suitable for synchronous DC-DC converter switch stages
• Ideal for motor-drive low-side switching arrangements
• Used with battery-management power distribution circuits
• Can be used for high-current load switching on PCBs
• Used for automotive power modules requiring thermal ruggedness

What thermal range can it tolerate in demanding environments?

It can function across a broad temperature span from -55°C up to 175°C, enabling use in thermally challenging conditions.

How does the device behave as a switching element regarding forward voltage?

The forward voltage is specified at 1.2V for power-switch conduction paths, which informs voltage drop and thermal design calculations.

What package and mounting type should designers expect for PCB assembly?

It is supplied in a PowerPAK surface-mount package intended for PCB mounting to support compact board layouts.

Is it suitable for automotive-grade assemblies and standards?

It conforms to AEC-Q101 requirements for semiconductor devices targeted at automotive applications.