Vishay SIRS4300DP Type N-Channel Single MOSFETs, 680 A, 30 V Enhancement, 8-Pin PowerPAK SIRS4300DP-T1-RE3

N° de stock RS:: 653-095
Référence fabricant:: SIRS4300DP-T1-RE3
Fabricant:: Vishay

Vishay SIRS4300DP Type N-Channel Single MOSFETs, 680 A, 30 V Enhancement, 8-Pin PowerPAK SIRS4300DP-T1-RE3

Sous-total (1 bobine de 3000 unités)*

7 038,00 €

(TVA exclue)

8 517,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

3 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	la bobine*
3000 +	2,346 €	7 038,00 €

*Prix donné à titre indicatif

N° de stock RS:: 653-095
Référence fabricant:: SIRS4300DP-T1-RE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Continuous Drain Current Id	680A
	Maximum Drain Source Voltage Vds	30V
	Series	SIRS4300DP
	Package Type	PowerPAK
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.00040Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	84nC
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	278W
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Length	6.10mm
	Height	0.95mm
	Width	5.10mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Continuous Drain Current Id 680A
	Maximum Drain Source Voltage Vds 30V
	Series SIRS4300DP
	Package Type PowerPAK
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.00040Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 84nC
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 278W
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Length 6.10mm
	Height 0.95mm
	Width 5.10mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIRS4300DP-T1-RE3

Pays d'origine :: CN

Vishay SIRS4300DP Series Single MOSFETs, 30V Maximum Drain Source Voltage, 680A Maximum Continuous Drain Current - SIRS4300DP-T1-RE3

This single MOSFET device is a high-current N-channel power transistor designed for surface-mounted switching and power-conversion tasks. It operates across a wide temperature range and is intended for applications requiring very low conduction losses and substantial continuous current handling. The component is compatible with typical PCB assembly processes and offers gate-driven enhancement-mode control for fast switching.

Features and Benefits:

• Very low Rds(on) 0.0004Ω reduces conduction losses and heat
• Maximum continuous current 680A enables heavy-load switching
• Drain-source voltage 30V supports low-voltage power rails
• Maximum power dissipation 278W allows high-power operation
• Typical gate charge 84nC yields predictable switching energy
• Maximum gate-source voltage 20V protects gate during drive transients

Applications

• Suitable for high-current motor-drive stages
• Ideal for synchronous rectification in PSU designs
• Used with battery management and DC-DC converters
• Can be used for server and telecoms power distribution
• Suitable for high-power MOSFET modules in power stacks

What thermal conditions can it tolerate during operation?

It is specified to function from -55°C up to 150°C, enabling use in environments with wide temperature swings while maintaining electrical performance.

What package and mounting type does it use for PCB assembly?

The device comes in a PowerPAK surface-mount package designed for low-profile assembly and efficient thermal contact with PCB copper.

How does the forward voltage affect conduction performance?

The typical forward voltage of 1.1V influences conduction losses during synchronous rectification and body-diode conduction intervals, affecting overall efficiency in low-voltage systems.

What gate-drive constraints must be observed to avoid damage?

The gate must not exceed ±20V relative to the source

keeping the drive within this limit prevents gate-dielectric stress and ensures reliable switching.