Vishay SIRS5702DP Type N-Channel Single MOSFETs, 119 A, 150 V Enhancement, 8-Pin PowerPAK
- N° de stock RS:
- 653-131
- Référence fabricant:
- SIRS5702DP-T1-RE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
3,05 €
(TVA exclue)
3,69 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 6 000 unité(s) expédiée(s) à partir du 19 janvier 2026
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Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 3,05 € |
| 10 - 24 | 2,96 € |
| 25 - 99 | 2,90 € |
| 100 - 499 | 2,47 € |
| 500 + | 2,33 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-131
- Référence fabricant:
- SIRS5702DP-T1-RE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 119A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK | |
| Series | SIRS5702DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0072Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Power Dissipation Pd | 245W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Width | 5.10 mm | |
| Standards/Approvals | No | |
| Length | 6.10mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 119A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK | ||
Series SIRS5702DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0072Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Power Dissipation Pd 245W | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Width 5.10 mm | ||
Standards/Approvals No | ||
Length 6.10mm | ||
Automotive Standard No | ||
The Vishay N-channel MOSFET designed for high-efficiency switching in power-dense systems. It supports up to 150 V drain-source voltage. Packaged in PowerPAK SO-8S, it utilizes TrenchFET Gen V technology to deliver ultra-low RDS(on), reduced gate charge, and excellent thermal performance.
Pb Free
Halogen free
RoHS compliant
Liens connexes
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