Vishay SQ3426CEEV Type N-Channel Single MOSFETs, 7 A, 60 V Enhancement, 6-Pin TSOP-6
- N° de stock RS:
- 653-062
- Référence fabricant:
- SQ3426CEEV-T1_GE3
- Fabricant:
- Vishay
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Ruban(s) | le ruban |
|---|---|
| 1 - 24 | 0,41 € |
| 25 - 99 | 0,36 € |
| 100 - 499 | 0,34 € |
| 500 - 999 | 0,28 € |
| 1000 + | 0,26 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-062
- Référence fabricant:
- SQ3426CEEV-T1_GE3
- Fabricant:
- Vishay
Spécifications
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Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSOP-6 | |
| Series | SQ3426CEEV | |
| Mount Type | PCB | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.042Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19.5nC | |
| Maximum Power Dissipation Pd | 5W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.10mm | |
| Width | 2.98mm | |
| Standards/Approvals | RoHS | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSOP-6 | ||
Series SQ3426CEEV | ||
Mount Type PCB | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.042Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19.5nC | ||
Maximum Power Dissipation Pd 5W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 3.10mm | ||
Width 2.98mm | ||
Standards/Approvals RoHS | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
Vishay SQ3426CEEV Series Single MOSFETs, 60V Drain Source Voltage, 7A Continuous Drain Current - SQ3426CEEV-T1_GE3
This single MOSFET device is an N‑channel enhancement transistor designed for power switching on PCB assemblies. It operates across a wide temperature range for demanding environments and conforms to RoHS and automotive stress requirements, making it suitable for industrial and vehicle electronics where controlled conduction and switching are required.
Features and Benefits:
• 60V drain rating enables medium‑voltage switching applications
• 7A continuous drain current supports substantial load currents
• 0.042 Ω low Rds(on) minimises conduction losses
• 19.5 nC gate charge permits predictable switching profiles
• 5W power dissipation allows moderate thermal loading
• 20V gate‑limit protects against excessive drive voltages
• 7A continuous drain current supports substantial load currents
• 0.042 Ω low Rds(on) minimises conduction losses
• 19.5 nC gate charge permits predictable switching profiles
• 5W power dissipation allows moderate thermal loading
• 20V gate‑limit protects against excessive drive voltages
Applications
• Suitable for automotive power distribution modules
• Ideal for motor driver stages in control systems
• Used with DC-DC converter outputs for regulation
• Can be used for load switching in industrial electronics
• Suitable for power management on PCB‑mounted assemblies
• Ideal for motor driver stages in control systems
• Used with DC-DC converter outputs for regulation
• Can be used for load switching in industrial electronics
• Suitable for power management on PCB‑mounted assemblies
What package type should designers plan for on the PCB?
The component arrives in a TSOP‑6 surface‑mount package requiring a six‑pin footprint and appropriate copper for thermal dissipation.
How does the device handle extreme temperatures in field use?
It is rated from -55 °C to 175 °C, supporting operation in both cold‑start and high‑temperature environments without derating the specified operating thresholds.
What electrical constraint must be observed at the gate?
The gate‑to‑source voltage must not exceed 20V to avoid overstress and potential device damage.
How does forward voltage affect switching performance?
The forward voltage of 1.2V influences conduction drop during on‑state transitions and should be factored into loss and thermal calculations.
Liens connexes
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