Vishay SQ3419CEV Type P-Channel Single MOSFETs, -6.9 A, -40 V Enhancement, 6-Pin TSOP-6 SQ3419CEV-T1_GE3

N° de stock RS:: 653-161
Référence fabricant:: SQ3419CEV-T1_GE3
Fabricant:: Vishay

Vishay SQ3419CEV Type P-Channel Single MOSFETs, -6.9 A, -40 V Enhancement, 6-Pin TSOP-6 SQ3419CEV-T1_GE3

Sous-total (1 bobine de 3000 unités)*

807,00 €

(TVA exclue)

975,00 €

(TVA incluse)

Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard

Unité	Prix par unité	la bobine*
3000 +	0,269 €	807,00 €

*Prix donné à titre indicatif

N° de stock RS:: 653-161
Référence fabricant:: SQ3419CEV-T1_GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type P
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	-6.9A
	Maximum Drain Source Voltage Vds	-40V
	Package Type	TSOP-6
	Series	SQ3419CEV
	Mount Type	PCB
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.092Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	5W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	11.3nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Height	1.1mm
	Length	3.10mm
	Width	2.98mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Vishay
	Channel Type Type P
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id -6.9A
	Maximum Drain Source Voltage Vds -40V
	Package Type TSOP-6
	Series SQ3419CEV
	Mount Type PCB
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.092Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 5W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 11.3nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Height 1.1mm
	Length 3.10mm
	Width 2.98mm
	Automotive Standard AEC-Q101

Datasheet - SQ3419CEV-T1_GE3

Vishay SQ3419CEV Series Single MOSFETs, -40V Drain-Source Voltage, -6.9A Drain Current - SQ3419CEV-T1_GE3

This single MOSFET device is a P-channel enhancement transistor intended for PCB mounting in automotive and industrial control systems. Designed to operate within demanding temperature ranges, it supports switching and load control duties where a P-channel configuration is preferred. The component is supplied in a Compact TSOP-6 package suitable for space-constrained assemblies and conforms to RoHS standards.

Features and Benefits:

• 40V maximum drain-source voltage provides headroom for automotive systems • -6.9A continuous drain current supports moderate power loads • 0.092 Ω low Rds(on) reduces conduction losses and heat generation • 11.3 nC typical gate charge enables predictable switching performance • 5W power dissipation allows sustained operation under load • Rated for -55 °C to 175 °C use in high-temperature environments

Applications

• Suitable for battery management and load switching in vehicles • Ideal for power distribution in automotive electronic modules • Used for polarity protection and reverse-current control in DC circuits • Can be used for high-temperature industrial control electronics

What package type should I allow for board layout?

The component comes in a TSOP-6 package with six pins, requiring pad and thermal planning compatible with surface-mount PCB assembly.

How does the device handle gate drive requirements?

It tolerates gate-source voltages up to 20 V, enabling compatibility with common automotive and industrial gate-drive voltages.

What environmental limits apply during operation?

The device is specified for continuous use down to -55 °C and up to 175 °C, allowing operation across broad thermal conditions.

Are there any standard approvals relevant to automotive design?

It meets AEC‑Q101 requirements and is supplied in a RoHS‑compliant format suitable for regulatory‑aware manufacturing.