Vishay SQ3419CEV Type P-Channel Single MOSFETs, -6.9 A, -40 V Enhancement, 6-Pin TSOP-6 SQ3419CEV-T1_GE3

N° de stock RS:: 653-161
Référence fabricant:: SQ3419CEV-T1_GE3
Fabricant:: Vishay

Vishay SQ3419CEV Type P-Channel Single MOSFETs, -6.9 A, -40 V Enhancement, 6-Pin TSOP-6 SQ3419CEV-T1_GE3

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Vishay SQ3419CEV Type P-Channel Single MOSFETs, -6.9 A, -40 V Enhancement, 6-Pin TSOP-6

N° de stock RS: 653-162

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N° de stock RS:: 653-161
Référence fabricant:: SQ3419CEV-T1_GE3
Fabricant:: Vishay

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type P
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	-6.9A
	Maximum Drain Source Voltage Vds	-40V
	Series	SQ3419CEV
	Package Type	TSOP-6
	Mount Type	PCB
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.092Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	5W
	Typical Gate Charge Qg @ Vgs	11.3nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	175°C
	Height	1.1mm
	Width	2.98mm
	Standards/Approvals	RoHS
	Length	3.1mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Vishay
	Channel Type Type P
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id -6.9A
	Maximum Drain Source Voltage Vds -40V
	Series SQ3419CEV
	Package Type TSOP-6
	Mount Type PCB
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.092Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 5W
	Typical Gate Charge Qg @ Vgs 11.3nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 175°C
	Height 1.1mm
	Width 2.98mm
	Standards/Approvals RoHS
	Length 3.1mm
	Automotive Standard AEC-Q101

Datasheet - SQ3419CEV-T1_GE3

Vishay SQ3419CEV Series Single MOSFETs, 5W Maximum Power Dissipation, -40V Maximum Drain Source Voltage - SQ3419CEV-T1_GE3

This single MOSFETs device is a P‑channel enhancement‑mode power transistor designed for PCB mounting in electronic systems requiring controlled high‑side switching and power management. It operates across a broad temperature range and meets automotive qualification standards, making it suitable for demanding environments where compact packaged MOSFETs are required.

Features and Benefits:

• 40V drain‑source rating enabling robust high‑side switching
• 6.9A continuous drain current supporting moderate load currents
• 0.092Ω maximum Rds(on) reducing conduction losses
• 11.3nC typical gate charge allowing faster gate transitions
• 5W maximum power dissipation handling thermal stress during operation
• AEC‑Q101 qualification providing suitability for automotive electronics

Applications

• Suitable for high‑side switching in vehicle control modules
• Ideal for power distribution in compact motor drivers
• Used with battery management systems for protection switching
• Can be used for DC‑DC converter P‑channel stages
• Suitable for compact PCB power control in industrial modules

What package is used and how does it benefit PCB layout?

It uses a TSOP‑6 package which offers a low profile and multiple pins for thermal and electrical connection, simplifying PCB routing in space‑constrained designs.

What gate voltage limits should designers observe?

The gate‑to‑source voltage must not exceed ±20V to avoid gate oxide stress and ensure long‑term reliability.

How does the device perform in high‑temperature environments?

The device is rated to operate from -55°C up to 175°C, allowing use in applications with wide thermal excursions.

What pin count and mounting style are specified?

It has six pins and is intended for PCB mounting to facilitate integration into standard board assemblies.