Vishay SQ3426CEEV Type N-Channel Single MOSFETs, 7 A, 60 V Enhancement, 6-Pin TSOP-6 SQ3426CEEV-T1_GE3

N° de stock RS:: 653-061
Référence fabricant:: SQ3426CEEV-T1_GE3
Fabricant:: Vishay

Vishay SQ3426CEEV Type N-Channel Single MOSFETs, 7 A, 60 V Enhancement, 6-Pin TSOP-6 SQ3426CEEV-T1_GE3

Sous-total (1 bobine de 3000 unités)*

612,00 €

(TVA exclue)

741,00 €

(TVA incluse)

Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard

Unité	Prix par unité	la bobine*
3000 +	0,204 €	612,00 €

*Prix donné à titre indicatif

N° de stock RS:: 653-061
Référence fabricant:: SQ3426CEEV-T1_GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	7A
	Maximum Drain Source Voltage Vds	60V
	Series	SQ3426CEEV
	Package Type	TSOP-6
	Mount Type	PCB
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.042Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	19.5nC
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	5W
	Maximum Operating Temperature	175°C
	Width	2.98mm
	Standards/Approvals	RoHS
	Height	1.1mm
	Length	3.10mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 7A
	Maximum Drain Source Voltage Vds 60V
	Series SQ3426CEEV
	Package Type TSOP-6
	Mount Type PCB
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.042Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 19.5nC
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 5W
	Maximum Operating Temperature 175°C
	Width 2.98mm
	Standards/Approvals RoHS
	Height 1.1mm
	Length 3.10mm
	Automotive Standard AEC-Q101

Vishay SQ3426CEEV Series Single MOSFETs, 60V Maximum Drain Source Voltage, 7A Maximum Continuous Drain Current - SQ3426CEEV-T1_GE3

This single MOSFETs device is an N‑channel enhancement switch designed for power control on printed circuit boards in automotive and industrial environments. It handles switching duties at moderate voltages and currents while operating across a wide temperature range, making it suitable for applications that demand compact, PCB‑mounted power transistors conforming to industry manufacturing norms.

Features and Benefits:

• 60V drain voltage enables medium‑voltage switching capability
• 7A continuous drain current supports substantial load currents
• 0.042 Ω RDS(on) minimises conduction losses during on‑state
• 5W power dissipation allows steady thermal handling on PCB
• 19.5 nC typical gate charge reduces switching energy losses
• Rated to 175 °C maximum operating temperature for high‑temperature use

Applications

• Suitable for DC motor driver stages in automation equipment
• Ideal for load switching in vehicle electronics complying with AEC‑Q101
• Used for power management in industrial control modules
• Can be used for switched power rails in Compact consumer devices

What mounting style is required for integration?

It is intended for PCB mounting in a TSOP‑6 package with six pins to match standard surface‑mount layouts.

What gate voltage limits must designers observe?

The gate‑to‑source voltage must not exceed ±20V during operation to avoid device stress.

How does thermal tolerance affect cooling strategy?

With a 175 °C maximum operating temperature and 5W dissipation, designers should provide adequate PCB copper area or heatsinking to maintain junction temperatures within safe limits.

What environmental or approval considerations apply?

The device meets RoHS requirements and is produced to automotive AEC‑Q101 standard for use in regulated automotive designs.