Vishay SQ3426CE Type N-Channel Single MOSFETs, 7 A, 60 V Enhancement, 6-Pin TSOP-6 SQ3426CEEV-T1_GE3
- N° de stock RS:
- 653-061
- Référence fabricant:
- SQ3426CEEV-T1_GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
612,00 €
(TVA exclue)
741,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 29 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,204 € | 612,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-061
- Référence fabricant:
- SQ3426CEEV-T1_GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSOP-6 | |
| Series | SQ3426CE | |
| Mount Type | PCB | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.042Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 19.5nC | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Length | 3.10mm | |
| Width | 2.98 mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSOP-6 | ||
Series SQ3426CE | ||
Mount Type PCB | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.042Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 19.5nC | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Length 3.10mm | ||
Width 2.98 mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive-grade N-channel MOSFET designed for compact, low-voltage switching applications. It supports up to 60 V drain-source voltage and operates reliably at junction temperatures up to 175 °C. Packaged in a TSOP-6 format, it utilizes TrenchFET technology for efficient performance in space-constrained environments.
AEC Q101 qualified
Pb Free
Halogen free
RoHS compliant
Liens connexes
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