Vishay SQ3419CEV Type P-Channel Single MOSFETs, -6.9 A, -40 V Enhancement, 6-Pin TSOP-6
- N° de stock RS:
- 653-162
- Référence fabricant:
- SQ3419CEV-T1_GE3
- Fabricant:
- Vishay
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0,53 €
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0,64 €
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Ruban(s) | le ruban |
|---|---|
| 1 - 24 | 0,53 € |
| 25 - 99 | 0,47 € |
| 100 - 499 | 0,43 € |
| 500 - 999 | 0,36 € |
| 1000 + | 0,34 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-162
- Référence fabricant:
- SQ3419CEV-T1_GE3
- Fabricant:
- Vishay
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | -6.9A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | SQ3419CEV | |
| Package Type | TSOP-6 | |
| Mount Type | PCB | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.092Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11.3nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.98mm | |
| Standards/Approvals | RoHS | |
| Length | 3.10mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id -6.9A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series SQ3419CEV | ||
Package Type TSOP-6 | ||
Mount Type PCB | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.092Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11.3nC | ||
Maximum Operating Temperature 175°C | ||
Width 2.98mm | ||
Standards/Approvals RoHS | ||
Length 3.10mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
Vishay SQ3419CEV Series Single MOSFETs, -40V Drain-Source Voltage, -6.9A Drain Current - SQ3419CEV-T1_GE3
This single MOSFET device is a P-channel enhancement transistor intended for PCB mounting in automotive and industrial control systems. Designed to operate within demanding temperature ranges, it supports switching and load control duties where a P-channel configuration is preferred. The component is supplied in a Compact TSOP-6 package suitable for space-constrained assemblies and conforms to RoHS standards.
Features and Benefits:
• 40V maximum drain-source voltage provides headroom for automotive systems • -6.9A continuous drain current supports moderate power loads • 0.092 Ω low Rds(on) reduces conduction losses and heat generation • 11.3 nC typical gate charge enables predictable switching performance • 5W power dissipation allows sustained operation under load • Rated for -55 °C to 175 °C use in high-temperature environments
Applications
• Suitable for battery management and load switching in vehicles • Ideal for power distribution in automotive electronic modules • Used for polarity protection and reverse-current control in DC circuits • Can be used for high-temperature industrial control electronics
What package type should I allow for board layout?
The component comes in a TSOP-6 package with six pins, requiring pad and thermal planning compatible with surface-mount PCB assembly.
How does the device handle gate drive requirements?
It tolerates gate-source voltages up to 20 V, enabling compatibility with common automotive and industrial gate-drive voltages.
What environmental limits apply during operation?
The device is specified for continuous use down to -55 °C and up to 175 °C, allowing operation across broad thermal conditions.
Are there any standard approvals relevant to automotive design?
It meets AEC‑Q101 requirements and is supplied in a RoHS‑compliant format suitable for regulatory‑aware manufacturing.
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