Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN3545N8-G
- N° de stock RS:
- 598-869
- Référence fabricant:
- DN3545N8-G
- Fabricant:
- Microchip
Sous-total (1 bobine de 2000 unités)*
1 926,00 €
(TVA exclue)
2 330,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 + | 0,963 € | 1 926,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 598-869
- Référence fabricant:
- DN3545N8-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Channel Type | N-Channel DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-252 (D-PAK-3) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Depletion Mode | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, ISO/TS‑16949 | |
| Length | 4.4mm | |
| Height | 2.29mm | |
| Width | 3 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Channel Type N-Channel DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-252 (D-PAK-3) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Depletion Mode | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, ISO/TS‑16949 | ||
Length 4.4mm | ||
Height 2.29mm | ||
Width 3 mm | ||
Automotive Standard No | ||
The Microchip Depletion mode transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Liens connexes
- Microchip DN3145 Silicon N-Channel MOSFET 450 V Depletion, 3-Pin SOT-89 DN3145N8-G
- Microchip DN3545 N-Channel MOSFET Transistor 450 V Depletion, 3-Pin TO-92 DN3545N3-G
- Microchip DN3135 N-Channel MOSFET 350 V Depletion, 3-Pin SOT-89 DN3135N8-G
- Microchip DN3525 N-Channel MOSFET 250 V Depletion, 3-Pin SOT-89 DN3525N8-G
- Microchip DN3765 Silicon N-Channel MOSFET 650 V Depletion, 3-Pin DPAK DN3765K4-G
- Infineon SN7002I N-Channel MOSFET 60 V Depletion, 3-Pin SOT-23 SN7002IXTSA1
- Microchip DN2530 Silicon N-Channel MOSFET 300 V Depletion, 3-Pin TO-243AA DN2530N8-G
- Microchip LND01 Silicon N-Channel MOSFET 9 V Depletion, 5-Pin SOT-23 LND01K1-G