Microchip DN2470 Type N-Channel RF MOSFET, 170 mA, 700 V Depletion, 3-Pin TO-252 DN2470K4-G
- N° de stock RS:
- 598-941
- Référence fabricant:
- DN2470K4-G
- Fabricant:
- Microchip
Sous-total (1 bobine de 2000 unités)*
2 686,00 €
(TVA exclue)
3 250,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 08 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 + | 1,343 € | 2 686,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 598-941
- Référence fabricant:
- DN2470K4-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Channel Type | Type N | |
| Product Type | RF MOSFET | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-252 | |
| Series | DN2470 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.265 in | |
| Standards/Approvals | RoHS-compliant | |
| Height | 0.94in | |
| Length | 0.245in | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Channel Type Type N | ||
Product Type RF MOSFET | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-252 | ||
Series DN2470 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 0.265 in | ||
Standards/Approvals RoHS-compliant | ||
Height 0.94in | ||
Length 0.245in | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Microchip Low threshold depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Liens connexes
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