Microchip VP0550 N-Channel Vertical DMOS FET-Channel Single MOSFETs, 350 mA, 90 V Enhancement Mode, 3-Pin TO-92-3

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Sous-total (1 sachet de 1000 unités)*

1 428,00 €

(TVA exclue)

1 728,00 €

(TVA incluse)

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Prix par unité
Le Sachet*
1000 +1,428 €1 428,00 €

*Prix donné à titre indicatif

N° de stock RS:
598-726
Référence fabricant:
VP0550N3-G
Fabricant:
Microchip
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Marque

Microchip

Product Type

Single MOSFETs

Channel Type

N-Channel Vertical DMOS FET

Maximum Continuous Drain Current Id

350mA

Maximum Drain Source Voltage Vds

90V

Package Type

TO-92-3 (TO-226AA)

Series

VP0550

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3Ω

Channel Mode

Enhancement Mode

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.8V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Height

5.33mm

Width

4.19 mm

Length

5.08mm

Automotive Standard

No

The Microchip P Channel enhancement-mode vertical MOSFET is a low-threshold, normally-off transistor that utilizes a vertical DMOS structure and Supertex’s proven silicon-gate manufacturing process. This combination delivers the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient inherent in MOS devices. As with all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown, ensuring robust and reliable performance.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

High input impedance and high gain

Excellent thermal stability

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