Microchip VP3203 N-Channel Vertical DMOS FET-Channel Single MOSFETs, 350 mA, 90 V Enhancement Mode, 3-Pin TO-92-3
- N° de stock RS:
- 598-595
- Référence fabricant:
- VP3203N8-G
- Fabricant:
- Microchip
Sous-total (1 bobine de 2000 unités)*
2 616,00 €
(TVA exclue)
3 166,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 28 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 + | 1,308 € | 2 616,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 598-595
- Référence fabricant:
- VP3203N8-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Channel Type | N-Channel Vertical DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 90V | |
| Series | VP3203 | |
| Package Type | TO-92-3 (TO-226AA) | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.33mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 5.08mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Channel Type N-Channel Vertical DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 90V | ||
Series VP3203 | ||
Package Type TO-92-3 (TO-226AA) | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Height 5.33mm | ||
Standards/Approvals RoHS Compliant | ||
Length 5.08mm | ||
Automotive Standard No | ||
The Microchip P Channel enhancement-mode vertical MOSFET is a low-threshold, normally-off transistor that utilizes a vertical DMOS structure and Supertex’s proven silicon-gate manufacturing process. This combination delivers the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient inherent in MOS devices. As with all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown, ensuring robust and reliable performance.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
High input impedance and high gain
Excellent thermal stability
Liens connexes
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