Microchip VN2210 N-Channel Vertical DMOS FET-Channel Single MOSFETs, 350 mA, 90 V Enhancement Mode, 3-Pin TO-92-3
- N° de stock RS:
- 598-655
- Référence fabricant:
- VN2210N2
- Fabricant:
- Microchip
Sous-total (1 sachet de 500 unités)*
9 248,50 €
(TVA exclue)
11 190,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 16 juillet 2026
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Unité | Prix par unité | Le Sachet* |
|---|---|---|
| 500 + | 18,497 € | 9 248,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 598-655
- Référence fabricant:
- VN2210N2
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Channel Type | N-Channel Vertical DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 90V | |
| Series | VN2210 | |
| Package Type | TO-92-3 (TO-226AA) | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement Mode | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.33mm | |
| Length | 5.08mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Channel Type N-Channel Vertical DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 90V | ||
Series VN2210 | ||
Package Type TO-92-3 (TO-226AA) | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement Mode | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Height 5.33mm | ||
Length 5.08mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Pays d'origine :
- TH
The Microchip N channel enhancement-mode vertical transistor utilizes a vertical double-diffused metal oxide semiconductor (DMOS) structure along with a well-proven silicon gate manufacturing process. This combination ensures the device is free from secondary breakdown and operates with a low power drive requirement, making it efficient and reliable for various applications.
Ease of paralleling
Low power drive requirement
High input impedance and high gain
Liens connexes
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