Infineon CoolSiC Type N-Channel MOSFET, 202 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R010M1TXKSA1
- N° de stock RS:
- 349-372
- Référence fabricant:
- AIMZH120R010M1TXKSA1
- Fabricant:
- Infineon
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34,00 €
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41,14 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 34,00 € |
| 10 + | 30,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-372
- Référence fabricant:
- AIMZH120R010M1TXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 202A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | CoolSiC | |
| Package Type | PG-TO-247-4-STD-NT6.7 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 11.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Maximum Power Dissipation Pd | 750W | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q100, AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 202A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series CoolSiC | ||
Package Type PG-TO-247-4-STD-NT6.7 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 11.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Maximum Power Dissipation Pd 750W | ||
Maximum Gate Source Voltage Vgs 23V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q100, AEC-Q101 | ||
- Pays d'origine :
- CN
Infineon CoolSiC Series MOSFET, 1200V Drain Source Voltage, 202A Continuous Drain Current - AIMZH120R010M1TXKSA1
This n-channel enhancement MOSFET is a silicon carbide power transistor designed for high-voltage switching in demanding electronic systems. It is intended for applications requiring robust thermal performance and elevated voltage capability while supporting conventional through‑hole mounting in a PG-TO-247-4 package.
Features and Benefits:
• 1200V drain rating enabling high-voltage circuit operation
• 202A continuous drain current supporting heavy current loads
• 11.3 mΩ low Rds(on) reducing conduction losses
• 750W power dissipation allowing sustained high-power use
• 178 nC gate charge facilitating controlled switching dynamics
• -55 to 175 °C operating range for extreme temperature endurance
• 202A continuous drain current supporting heavy current loads
• 11.3 mΩ low Rds(on) reducing conduction losses
• 750W power dissipation allowing sustained high-power use
• 178 nC gate charge facilitating controlled switching dynamics
• -55 to 175 °C operating range for extreme temperature endurance
Applications
• Suitable for high-voltage power converters in industrial systems
• Ideal for traction inverter stages requiring high current
• Used with automotive-grade electronics conforming to AEC‑Q101
• Can be used for renewable energy inverter modules
• Suitable for power supplies in harsh thermal environments
• Ideal for traction inverter stages requiring high current
• Used with automotive-grade electronics conforming to AEC‑Q101
• Can be used for renewable energy inverter modules
• Suitable for power supplies in harsh thermal environments
How does the device cope with automotive qualification requirements?
It meets recognised automotive stress test standards to address reliability needs in vehicle electronics.
What mounting method should designers plan for?
The component uses a through‑hole PG-TO-247-4 package for secure board attachment and heat-sink compatibility.
How will gate drive design be affected by switching behaviour?
Designers should account for a typical gate charge of 178 nC when sizing gate drivers to achieve desired switching speeds and minimise losses.
What polarity and conduction mode does it employ?
It operates as an N-channel device in enhancement mode, conducting when a positive gate-source voltage is applied.
Liens connexes
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