Infineon CoolSiC Type N-Channel MOSFET, 38 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R060M1TXKSA1
- N° de stock RS:
- 349-377
- Référence fabricant:
- AIMZH120R060M1TXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
10,88 €
(TVA exclue)
13,16 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 237 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 10,88 € |
| 10 - 99 | 9,80 € |
| 100 + | 9,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-377
- Référence fabricant:
- AIMZH120R060M1TXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PG-TO-247-4-STD-NT6.7 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 197W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101, AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PG-TO-247-4-STD-NT6.7 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 197W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101, AEC-Q100 | ||
- Pays d'origine :
- CN
The Infineon SiC MOSFET features best in class switching performance, robustness against parasitic turn ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on board charger and DC to DC applications.
Very low switching losses
Best in class switching energy
Lowest device capacitances
Sense pin for optimized switching performance
Suitable for HV creepage requirements
Thinner leads for reduced risk of solder bridges
Liens connexes
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R020M1TXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R040M1TXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R160M1TXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R010M1TXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R030M1TXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R120M1TXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R080M1TXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U02 IMZA120R030M1HXKSA1