Infineon CoolSiC Type N-Channel MOSFET, 5.4 A, 1700 V Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R1K0M1XKSA1
- N° de stock RS:
- 349-108
- Référence fabricant:
- IMWH170R1K0M1XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
11,48 €
(TVA exclue)
13,90 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 240 unité(s) expédiée(s) à partir du 05 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 5,74 € | 11,48 € |
| 20 - 198 | 5,165 € | 10,33 € |
| 200 - 998 | 4,765 € | 9,53 € |
| 1000 - 1998 | 4,425 € | 8,85 € |
| 2000 + | 3,96 € | 7,92 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-108
- Référence fabricant:
- IMWH170R1K0M1XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.4A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | PG-TO-247-3-STD-NN4.8 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 880mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.5nC | |
| Maximum Power Dissipation Pd | 70W | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.4A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type PG-TO-247-3-STD-NN4.8 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 880mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.5nC | ||
Maximum Power Dissipation Pd 70W | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Infineon CoolSiC 1700 V SiC Trench MOSFET is a high performance silicon carbide MOSFET designed for efficient power switching. It is 12 V / 0 V gate-source voltage compatible, making it suitable for use with most flyback controllers. Featuring a benchmark gate threshold voltage (VGS(th)) of 4.5 V, it ensures reliable and efficient switching performance in a wide range of power applications. This MOSFET is an excellent choice for systems requiring high voltage operation and enhanced energy efficiency.
Very low switching losses
Fully controllable dv/dt for EMI optimization
The .XT interconnection technology for best in class thermal performance
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