Infineon CoolSiC Type N-Channel MOSFET, 5.4 A, 1700 V Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R1K0M1XKSA1
- N° de stock RS:
- 349-108
- Référence fabricant:
- IMWH170R1K0M1XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
12,00 €
(TVA exclue)
14,52 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 240 unité(s) expédiée(s) à partir du 04 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 6,00 € | 12,00 € |
| 20 - 198 | 5,40 € | 10,80 € |
| 200 - 998 | 4,98 € | 9,96 € |
| 1000 - 1998 | 4,615 € | 9,23 € |
| 2000 + | 4,135 € | 8,27 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-108
- Référence fabricant:
- IMWH170R1K0M1XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.4A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | PG-TO-247-3-STD-NN4.8 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 880mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 15V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 70W | |
| Typical Gate Charge Qg @ Vgs | 5.5nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.4A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type PG-TO-247-3-STD-NN4.8 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 880mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 15V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 70W | ||
Typical Gate Charge Qg @ Vgs 5.5nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon CoolSiC Series MOSFET, 1700V Drain Source Voltage, 5.4A Continuous Drain Current - IMWH170R1K0M1XKSA1
This MOSFET is a silicon carbide N-channel enhancement device designed for high-voltage power switching in demanding electronic systems. It operates across a wide temperature span and mounts via through-hole to provide robust thermal contact and straightforward assembly in power modules and discrete boards.
Features and Benefits:
• 1700V maximum drain-source voltage enables high-voltage switching
• 5.4A continuous drain current supports moderate power loads
• 70W maximum power dissipation manages substantial thermal stress
• 880 mΩ drain-source resistance reduces conduction losses
• 5.5 nC typical gate charge allows fast gate transitions
• 15V gate-source limit protects gate-drive circuitry
• 5.4A continuous drain current supports moderate power loads
• 70W maximum power dissipation manages substantial thermal stress
• 880 mΩ drain-source resistance reduces conduction losses
• 5.5 nC typical gate charge allows fast gate transitions
• 15V gate-source limit protects gate-drive circuitry
Applications
• Suitable for high-voltage power converters
• Ideal for industrial motor-drive front-ends
• Used with battery management in high-voltage systems
• Can be used for renewable-energy inverter stages
• Suitable for laboratory power supplies and test rigs
• Ideal for industrial motor-drive front-ends
• Used with battery management in high-voltage systems
• Can be used for renewable-energy inverter stages
• Suitable for laboratory power supplies and test rigs
What mounting method does it require for installations?
It uses a through-hole package which is compatible with hand soldering and wave-solder assembly and offers solid mechanical anchoring for heatsinking arrangements.
How does the device cope with elevated ambient temperatures?
The component is specified to operate from -55 °C up to 175 °C, allowing use in environments with wide thermal variation and permitting designs with conservative derating for lifetime.
What electrical polarity and control mode should designers expect?
It is an N-channel device operating in enhancement mode, requiring a positive gate-source drive relative to the source to switch on.
Are there any regulatory material restrictions relevant to procurement?
The part is manufactured to be RoHS-compliant, meeting restrictions on certain hazardous substances for electronic components.
Liens connexes
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