Infineon CoolSiC Type N-Channel MOSFET, 17 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R160M1TXKSA1
- N° de stock RS:
- 349-381
- Référence fabricant:
- AIMZH120R160M1TXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
9,45 €
(TVA exclue)
11,43 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 9,45 € |
| 10 - 99 | 8,51 € |
| 100 - 499 | 7,84 € |
| 500 - 999 | 7,27 € |
| 1000 + | 6,51 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-381
- Référence fabricant:
- AIMZH120R160M1TXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PG-TO-247-4-STD-NT6.7 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 109W | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101, AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PG-TO-247-4-STD-NT6.7 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 109W | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101, AEC-Q100 | ||
- Pays d'origine :
- CN
The Infineon SiC MOSFET features best in class switching performance, robustness against parasitic turn ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on board charger and DC to DC applications.
Very low switching losses
Best in class switching energy
Lowest device capacitances
Sense pin for optimized switching performance
Suitable for HV creepage requirements
Thinner leads for reduced risk of solder bridges
Liens connexes
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