Infineon CoolSiC N-Channel MOSFET, 17 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R160M1TXKSA1
- N° de stock RS:
- 349-381
- Référence fabricant:
- AIMZH120R160M1TXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
6,72 €
(TVA exclue)
8,13 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 240 unité(s) expédiée(s) à partir du 21 septembre 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,72 € |
| 10 - 99 | 6,05 € |
| 100 - 499 | 5,58 € |
| 500 - 999 | 5,18 € |
| 1000 + | 4,64 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-381
- Référence fabricant:
- AIMZH120R160M1TXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PG-TO-247-4-STD-NT6.7 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 109W | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101, AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PG-TO-247-4-STD-NT6.7 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 109W | ||
Maximum Gate Source Voltage Vgs 23V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101, AEC-Q100 | ||
- Pays d'origine :
- CN
The Infineon SiC MOSFET features best in class switching performance, robustness against parasitic turn ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on board charger and DC to DC applications.
Very low switching losses
Best in class switching energy
Lowest device capacitances
Sense pin for optimized switching performance
Suitable for HV creepage requirements
Thinner leads for reduced risk of solder bridges
Liens connexes
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