Infineon OptiMOS-TM6 Type N-Channel MOSFET, 230 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N013TATMA1
- N° de stock RS:
- 349-164
- Référence fabricant:
- IAUCN04S6N013TATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
7,96 €
(TVA exclue)
9,63 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 000 unité(s) expédiée(s) à partir du 16 mars 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,592 € | 7,96 € |
| 50 - 95 | 1,512 € | 7,56 € |
| 100 - 495 | 1,40 € | 7,00 € |
| 500 - 995 | 1,288 € | 6,44 € |
| 1000 + | 1,24 € | 6,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-164
- Référence fabricant:
- IAUCN04S6N013TATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS-TM6 | |
| Package Type | PG-LHDSO-10-1 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 1.68mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 133W | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS-TM6 | ||
Package Type PG-LHDSO-10-1 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 1.68mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 133W | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
The Infineon Automotive MOSFET is an OptiMOS power MOSFET specifically designed for automotive applications. It is an N-channel, enhancement mode device with normal level characteristics. The MOSFET undergoes extended qualification beyond AEC-Q101 standards and features enhanced electrical testing, ensuring reliable performance. Its robust design makes it suitable for demanding automotive environments, offering durability and efficiency in power management.
MSL1 up to 260°C peak reflow
175°C operating temperature
RoHS compliant
Potential application
Liens connexes
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