Infineon F4-17MR12W1M1HP_B76 N-Channel MOSFET, 45 A, 1200 V Enhancement EasyPACK F417MR12W1M1HPB76BPSA1
- N° de stock RS:
- 348-966
- Référence fabricant:
- F417MR12W1M1HPB76BPSA1
- Fabricant:
- Infineon
Sous-total (1 unité)*
87,73 €
(TVA exclue)
106,15 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 30 unité(s) expédiée(s) à partir du 12 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 + | 87,73 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 348-966
- Référence fabricant:
- F417MR12W1M1HPB76BPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | F4-17MR12W1M1HP_B76 | |
| Package Type | EasyPACK | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 34.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60749, IEC 60068, IEC 60747 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series F4-17MR12W1M1HP_B76 | ||
Package Type EasyPACK | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 34.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Gate Source Voltage Vgs 23V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60749, IEC 60068, IEC 60747 | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Infineon EasyPACK 1B CoolSiC MOSFET fourpack module 1200 V, 17 mΩ G1 with NTC, pre-applied thermal interface material and PressFIT contact technology. This MOSFET is built with best-in-class packaging, featuring a compact 12 mm height for efficient integration. It utilizes leading edge Wide Bandgap materials, which enhance performance and energy efficiency. The design offers very low module stray inductance, reducing power losses and improving switching characteristics. Powered by the Enhanced CoolSiC MOSFET Gen 1, it provides superior thermal performance and reliability.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
Liens connexes
- Infineon F4-17MR12W1M1HP_B76 N-Channel MOSFET 1200 V Enhancement EasyPACK F433MR12W1M1HB76BPSA1
- Infineon F4-17MR12W1M1H_B76 N-Channel MOSFET 1200 V Enhancement EasyPACK F417MR12W1M1HB76BPSA1
- Infineon F4-8MR12W2M1H_B70 N-Channel MOSFET 1200 V Enhancement EasyPACK F48MR12W2M1HB70BPSA1
- Infineon F4-11MR12W2M1H_B70 N-Channel MOSFET 1200 V Enhancement EasyPACK F411MR12W2M1HB70BPSA1
- Infineon Half Bridge EasyPACK N-Channel MOSFET Modules 1200 V Enhancement, 22-Pin EasyPACK
- Infineon Half Bridge EasyPACK N-Channel MOSFET Modules 1200 V Enhancement, 22-Pin EasyPACK
- Infineon Half Bridge EasyPACK N-Channel MOSFET Modules 1200 V Enhancement, 22-Pin EasyPACK F3L8MXTR12C2M2H11BPSA1
- Infineon Half Bridge EasyPACK N-Channel MOSFET Modules 1200 V Enhancement, 22-Pin EasyPACK F413MXTR12C1M2H11BPSA1