Infineon F4-17MR12W1M1H_B76 N-Channel MOSFET, 45 A, 1200 V Enhancement EasyPACK F417MR12W1M1HB76BPSA1
- N° de stock RS:
- 349-252
- Référence fabricant:
- F417MR12W1M1HB76BPSA1
- Fabricant:
- Infineon
Sous-total (1 unité)*
86,72 €
(TVA exclue)
104,93 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 11 unité(s) expédiée(s) à partir du 09 octobre 2026
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Unité | Prix par unité |
|---|---|
| 1 + | 86,72 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-252
- Référence fabricant:
- F417MR12W1M1HB76BPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | EasyPACK | |
| Series | F4-17MR12W1M1H_B76 | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 34.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Forward Voltage Vf | 5.35V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747, IEC 60068, IEC 61140, IEC 60749 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type EasyPACK | ||
Series F4-17MR12W1M1H_B76 | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 34.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Gate Source Voltage Vgs 23V | ||
Forward Voltage Vf 5.35V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747, IEC 60068, IEC 61140, IEC 60749 | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Infineon EasyPACK 1B CoolSiC MOSFET fourpack module 1200 V, 17 mΩ G1 with NTC and PressFIT contact technology. This MOSFET is designed with best in class packaging, offering a compact 12 mm height for efficient space utilization. It leverages leading edge Wide Bandgap materials, providing enhanced power efficiency and performance. With very low module stray inductance, it minimizes power loss and improves switching dynamics.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
Liens connexes
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