Infineon IPD Type N-Channel MOSFET, 90 A, 60 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T022S7AXTMA1
- N° de stock RS:
- 349-198
- Référence fabricant:
- IPDQ60T022S7AXTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
9,44 €
(TVA exclue)
11,42 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 750 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 9,44 € |
| 10 - 99 | 8,50 € |
| 100 + | 7,84 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-198
- Référence fabricant:
- IPDQ60T022S7AXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IPD | |
| Package Type | PG-HDSOP-22 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 0.02Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Power Dissipation Pd | 416W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC Q101, JEDEC, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IPD | ||
Package Type PG-HDSOP-22 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 0.02Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Power Dissipation Pd 416W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC Q101, JEDEC, RoHS | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
The Infineon CoolMOS S7TA enables the best price performance for low frequency switching applications. The embedded temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7TA is optimized for static switching and high current applications. The new temperature sensor enhances S7A features, allowing the best possible utilization of the power transistor.
Optimized price performance in low frequency switching applications
High pulse current capability
Seamless diagnostics at lowest system cost
Increased system performance
Minimized conduction losses
More reliability and longer system lifetime
Shock and vibration resistance
No contact arcing or bouncing
Liens connexes
- Infineon IPD N-Channel MOSFET 600 V, 22-Pin PG-HDSOP-22 IPDQ60T022S7XTMA1
- Infineon IPD N-Channel MOSFET 60 V, 22-Pin PG-HDSOP-22 IPDQ60T040S7AXTMA1
- Infineon IPD N-Channel MOSFET 600 V, 22-Pin PG-HDSOP-22 IPDQ60T017S7AXTMA1
- Infineon IPD N-Channel MOSFET 600 V, 22-Pin PG-HDSOP-22 IPDQ60T017S7XTMA1
- Infineon IPD N-Channel MOSFET 600 V, 22-Pin PG-HDSOP-22 IPDQ60R016CM8XTMA1
- Infineon IPD N-Channel MOSFET 600 V, 22-Pin PG-HDSOP-22 IPDQ60R037CM8XTMA1
- Infineon IPD N-Channel MOSFET 600 V, 22-Pin PG-HDSOP-22 IPDQ60R007CM8XTMA1
- Infineon IPQ N-Channel MOSFET 60 V, 22-Pin PG-HDSOP-22 IPQC60T022S7AXTMA1