Infineon IPD Type N-Channel MOSFET, 113.3 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T017S7XTMA1
- N° de stock RS:
- 348-997
- Référence fabricant:
- IPDQ60T017S7XTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
16,24 €
(TVA exclue)
19,65 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 750 unité(s) expédiée(s) à partir du 16 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 16,24 € |
| 10 - 99 | 14,62 € |
| 100 + | 13,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 348-997
- Référence fabricant:
- IPDQ60T017S7XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 113.3A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD | |
| Package Type | PG-HDSOP-22 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 196nC | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC, JS-001 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 113.3A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD | ||
Package Type PG-HDSOP-22 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 196nC | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC, JS-001 | ||
- Pays d'origine :
- MY
The Infineon CoolMOS S7T enables the best price performance for low frequency switching applications. The embedded temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7T is optimized for static switching and high current applications. The new temperature sensor enhances S7 features, allowing the best possible utilization of the power transistor.
Increased system performance
Increased system performance
More compact and more straightforward design
Lower BOM or TCO over a prolonged lifetime
More reliability and longer system lifetime
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