Infineon IPD Type N-Channel MOSFET, 113.3 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T017S7XTMA1
- N° de stock RS:
- 348-997
- Référence fabricant:
- IPDQ60T017S7XTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
18,34 €
(TVA exclue)
22,19 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 750 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 18,34 € |
| 10 - 99 | 16,51 € |
| 100 + | 15,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 348-997
- Référence fabricant:
- IPDQ60T017S7XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 113.3A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-HDSOP-22 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 196nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 500W | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC, JS-001 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 113.3A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-HDSOP-22 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 196nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 500W | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC, JS-001 | ||
- Pays d'origine :
- MY
The Infineon CoolMOS S7T enables the best price performance for low frequency switching applications. The embedded temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7T is optimized for static switching and high current applications. The new temperature sensor enhances S7 features, allowing the best possible utilization of the power transistor.
Increased system performance
Increased system performance
More compact and more straightforward design
Lower BOM or TCO over a prolonged lifetime
More reliability and longer system lifetime
Liens connexes
- Infineon IPD N-Channel MOSFET 600 V, 22-Pin PG-HDSOP-22 IPDQ60T017S7AXTMA1
- Infineon IPD N-Channel MOSFET 600 V, 22-Pin PG-HDSOP-22 IPDQ60R016CM8XTMA1
- Infineon IPD N-Channel MOSFET 600 V, 22-Pin PG-HDSOP-22 IPDQ60R037CM8XTMA1
- Infineon IPD N-Channel MOSFET 600 V, 22-Pin PG-HDSOP-22 IPDQ60R007CM8XTMA1
- Infineon IPD N-Channel MOSFET 600 V, 22-Pin PG-HDSOP-22 IPDQ60T022S7XTMA1
- Infineon IPQ N-Channel MOSFET 600 V, 22-Pin PG-HDSOP-22 IPQC60T017S7XTMA1
- Infineon IPD N-Channel MOSFET 60 V, 22-Pin PG-HDSOP-22 IPDQ60T040S7AXTMA1
- Infineon IPD N-Channel MOSFET 60 V, 22-Pin PG-HDSOP-22 IPDQ60T022S7AXTMA1