Infineon IPD Type N-Channel MOSFET, 90 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T022S7XTMA1
- N° de stock RS:
- 348-998
- Référence fabricant:
- IPDQ60T022S7XTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
15,08 €
(TVA exclue)
18,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 750 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 15,08 € |
| 10 - 99 | 13,58 € |
| 100 + | 12,52 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 348-998
- Référence fabricant:
- IPDQ60T022S7XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-HDSOP-22 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 416W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.82V | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC, JS-001, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-HDSOP-22 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 416W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.82V | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC, JS-001, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolMOS S7T enables the best price performance for low frequency switching applications. The embedded temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7T is optimized for static switching and high current applications. The new temperature sensor enhances S7 features, allowing the best possible utilization of the power transistor.
Increased system performance
Increased system performance
More compact and more straightforward design
Lower BOM or TCO over a prolonged lifetime
More reliability and longer system lifetime
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