Infineon IPT Type N-Channel Power Transistor, 331 A, 120 V Enhancement, 8-Pin PG-HSOG-8 IPTG017N12NM6ATMA1
- N° de stock RS:
- 349-135
- Référence fabricant:
- IPTG017N12NM6ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
12,54 €
(TVA exclue)
15,18 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 1 800 unité(s) expédiée(s) à partir du 05 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 6,27 € | 12,54 € |
| 20 - 198 | 5,645 € | 11,29 € |
| 200 + | 5,20 € | 10,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-135
- Référence fabricant:
- IPTG017N12NM6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 331A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | IPT | |
| Package Type | PG-HSOG-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 113nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 395W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, MSL1 J-STD-020, IEC61249-2-21 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 331A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series IPT | ||
Package Type PG-HSOG-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 113nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 395W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, MSL1 J-STD-020, IEC61249-2-21 | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), ensuring minimal conduction losses for improved performance. With an excellent gate charge x RDS(on) product (FOM), it enables superior switching characteristics. The MOSFET also has very low reverse recovery charge (Qrr), contributing to reduced switching losses. Its high avalanche energy rating ensures robustness under stress, and it operates reliably at a 175°C temperature, making it suitable for demanding and high temperature environments.
Optimized for high frequency switching and synchronous rectification
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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