Infineon IPT Type N-Channel Power Transistor, 297 A, 135 V Enhancement, 8-Pin PG-HSOG-8 IPTG020N13NM6ATMA1
- N° de stock RS:
- 349-136
- Référence fabricant:
- IPTG020N13NM6ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
9,62 €
(TVA exclue)
11,64 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 1 800 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 9,62 € |
| 10 - 99 | 8,65 € |
| 100 - 499 | 7,98 € |
| 500 - 999 | 7,41 € |
| 1000 + | 6,63 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-136
- Référence fabricant:
- IPTG020N13NM6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 297A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Package Type | PG-HSOG-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 395W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 159nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 297A | ||
Maximum Drain Source Voltage Vds 135V | ||
Package Type PG-HSOG-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 395W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 159nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon OptiMOS 6 Power Transistor, 135 V is an N-channel, normal level MOSFET designed to deliver high efficiency performance in power applications. It features very low on-resistance (RDS(on)), which minimizes conduction losses for greater energy efficiency. With an excellent gate charge x RDS(on) product (FOM), it ensures optimal switching performance. The MOSFET also offers very low reverse recovery charge (Qrr), improving switching efficiency. Additionally, it is 100% avalanche tested for reliability and can operate at 175°C, making it suitable for high temperature and demanding environments.
Optimized for motor drives and battery powered applications
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
Liens connexes
- Infineon IPT N-Channel MOSFET 135 V, 8-Pin PG-HSOF-8 IPT020N13NM6ATMA1
- Infineon IPT N-Channel MOSFET 135 V, 16-Pin PG-HSOF-16 IPTC020N13NM6ATMA1
- Infineon IPT N-Channel MOSFET 135 V, 8-Pin PG-HSOF-8 IPTG029N13NM6ATMA1
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60T065S7XTMA1
- Infineon IPT N-Channel MOSFET 200 V, 8-Pin PG-HSOF-8 IPT129N20NM6ATMA1
- Infineon IPT N-Channel MOSFET 120 V, 8-Pin PG-HSOF-8 IPTG017N12NM6ATMA1
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60R016CM8XTMA1
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60R037CM8XTMA1